年終特惠   瑞薩IGBT單管RJH60D0DPK    

RJH60D0DPK  600V - 22A – IGBT

Features：

?    Short circuit withstand time (5 ?s typ.)

?    Low collector to emitter saturation voltageVCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

?    Built in fast recovery diode (100 ns typ.) in one package

?    Trench gate and thin wafer technology

?    High speed switchingtf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 ?, Ta = 25°C, inductive load)

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