hn2005:
IGBT損耗分開關(guān)損耗和導(dǎo)通損耗,當(dāng)LC固有頻率與IGBT工作頻率相差太多時(shí),電路的等效阻抗串聯(lián)時(shí)會(huì)增大,并聯(lián)變小.相對(duì)來(lái)說(shuō)導(dǎo)通損耗可能會(huì)變大,也可能會(huì)變小.視具體情況而定.但開關(guān)損耗一定變大,偏離越多,開通,關(guān)斷時(shí)電流越大,損耗也越大,同時(shí)關(guān)斷時(shí)di/dt也越大,關(guān)斷時(shí)電壓尖峰也越高,IGBT也容易擊穿.