AOS AOE6930集成了上管7mR和下管1.05mR并且用業(yè)界最先進的DFN5*6 XspairFET封裝，主要為大功率Vcore和CPU線路應用。 新的封裝直接把下管的源極連接到裸漏的散熱片去散熱，而且這樣可以幫助工程師更容易布局地線。下管提供1.05mR的超低內阻可以幫助客戶獲得更好效率提升，溫度的改善。

AOE6930 has integrated high-side and low-side MOSFETs, with 7mR and 1.05mR maximum Rds(on) respectively, within a 5mm*6mm XspairFET package, The low-side MOSFET source is connected to the exposed pad directly, which can easily be connected to the ground plane in PCB design. The device gives over all efficiency designers a significant benefit in enhancing the thermal dissipation. The device gives over all efficiency improvement and reduces the temperature rise in comparison with the current solutions found in the market.

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